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| www..com Pb Free Plating Product ISSUED DATE :2005/12/05 REVISED DATE : GJ3310 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 150m -10A The GJ3310 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage and battery power applications. *Simple Drive Requirement *2.5V Gate Drive Capability Description Features Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 : ID @TC=100 : IDM PD @TC=25 : Tj, Tstg Ratings -20 12 -10 -6.2 -24 25 0.01 -55 ~ +150 Unit V V A A A W W/ : : Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 5.0 110 Unit : /W : /W GJ3310 Page: 1/5 ISSUED DATE :2005/12/05 REVISED DATE : Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS BVDSS / Tj Min. -20 -0.5 - Typ. -0.1 4.4 6 1.5 0.6 2.5 60 70 60 300 180 60 Max. 100 -1 -25 150 250 - Unit V V/ : V S nA uA uA m Test Conditions VGS=0, ID=-250uA Reference to 25 : , ID=-1mA VDS=VGS, ID=-250uA VDS=-5V, ID=-2.8A VGS= 12V VDS=-20V, VGS=0 VDS=-16V, VGS=0 VGS=-4.5V, ID=-2.8A VGS=-2.5V, ID=-2.0A ID=-2.8A VDS=-6V VGS=-5V VDS=-6V ID=-1A VGS=-5V RG=6 RD=6 VGS=0V VDS=-6V f=1.0MHz Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=150 : ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss nC ns pF Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD IS ISM 1 Min. - Typ. - Max. -1.2 -10 -24 Unit V A A Test Conditions IS=-10A, VGS=0V, Tj=25 : VD=VG=0V, VS=-1.2V Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. GJ3310 Page: 2/5 ISSUED DATE :2005/12/05 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Maximum Drain Current v.s. Case Temperature GJ3310 Fig 6. Type Power Dissipation Page: 3/5 ISSUED DATE :2005/12/05 REVISED DATE : Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristics of Reverse Diode GJ3310 Fig 12. Gate Threshold Voltage v.s. Junction Temperature Page: 4/5 ISSUED DATE :2005/12/05 REVISED DATE : Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GJ3310 Page: 5/5 |
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